Semiconductor memory device having power line arranged in a mesh

Details Semiconductor memory device having power line arranged in a mesh Semiconductor memory device having power line arranged in a mesh

1994-04-07

1995-06-20

Popek, Joseph A.

Static information storage and retrieval

Powering

365 51, 365 63, G11C 502

Patent

active

054266157

ABSTRACT:
A semiconductor memory device includes a sense amp band comprising a plurality of sense amplifiers, and a plurality of power supply and ground lines arranged in a meshed shape. Power supply and ground lines include lines arranged in parallel with and in proximity to the sense amp band. Each sense amplifier in the sense amp band is connected to a power supply and ground line arranged in proximity to and in parallel with the sense amplifier through a drive component. Each drive component is provided for a predetermined number of sense amplifiers, and is rendered conductive in response to a sense amplifier activation signal from a signal line arranged in parallel with the sense amp band. The plurality of power supply and ground lines arranged in a meshed shape are contacted at crossings. Therefore, in the semiconductor memory device, no distribution of power supply potential is generated to allow a stable supply of a power supply and ground potential to an arbitrary circuit portion. In addition, since a sense amplifier is connected to proximate power supply and ground lines through a drive component, a reliable and high-speed sensing operation is possible irrespective of a length of a sense amp drive signal line.

REFERENCES:
patent: 4748596 (1988-05-01), Ogura et al.
patent: 5293559 (1994-03-01), Kim et al.
patent: 5321658 (1994-06-01), Ishimura et al.

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