Semiconductor memory device having pick-up structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S448000, C257S297000

Reexamination Certificate

active

07098520

ABSTRACT:
A semiconductor memory device includes a first transistor area doped by a first-type dopant for having a plurality of second-type transistors; a second transistor area doped by a second-type dopant for having a plurality of first-type transistors; a first guardring area doped by the first-type dopant between the first and second transistor areas; and a second guardring area doped by the second-type dopant between the first and second transistor areas, wherein the second guardring area runs parallel with the first guardring area in the direction from the first transistor area to the second transistor area.

REFERENCES:
patent: 4597805 (1986-07-01), Mohan Rao
patent: 4634901 (1987-01-01), McElroy
patent: 4825417 (1989-04-01), Seo
patent: 5552728 (1996-09-01), Lin
patent: 5907170 (1999-05-01), Forbes et al.
patent: 6072209 (2000-06-01), Noble et al.
patent: 6537871 (2003-03-01), Forbes et al.
patent: 6538330 (2003-03-01), Forbes
patent: 2002-141415 (2002-05-01), None

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