Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-08-29
2006-08-29
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S448000, C257S297000
Reexamination Certificate
active
07098520
ABSTRACT:
A semiconductor memory device includes a first transistor area doped by a first-type dopant for having a plurality of second-type transistors; a second transistor area doped by a second-type dopant for having a plurality of first-type transistors; a first guardring area doped by the first-type dopant between the first and second transistor areas; and a second guardring area doped by the second-type dopant between the first and second transistor areas, wherein the second guardring area runs parallel with the first guardring area in the direction from the first transistor area to the second transistor area.
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Park Byung-Kwon
Park Kyung-Wook
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Nelms David
Nguyen Thinh T
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