Semiconductor memory device having non-volatile memory transisto

Details Semiconductor memory device having non-volatile memory transisto Semiconductor memory device having non-volatile memory transisto

1988-07-08

1990-07-17

Carroll, J.

357 235, 357 71, 357 84, H01L 2978, H01L 2934, H01L 2348, H01L 2504

Patent

active

049424505

ABSTRACT:
A semiconductor memory device having a redundancy memory cell array is disclosed. UV-PROM's are employed as a programming means in the redundancy control section. A first impurity region is formed in the substrate and the control gate electrode of the UV-PROM is led out through the first impurity region. A second impurity region is formed in the substrate and crosses the first impurity region, and the floating gate electrode of the UV-PROM is covered by a metallic film which is contacted to the second impurity region.

REFERENCES:
patent: 4758984 (1988-07-01), Yoshida
patent: 4805138 (1989-02-01), McElroy et al.

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