Semiconductor memory device having low noise bit line structure

Details Semiconductor memory device having low noise bit line structure Semiconductor memory device having low noise bit line structure

1990-04-30

1991-07-16

Fears, Terrell W.

Static information storage and retrieval

Interconnection arrangements

365 51, 365206, G11C 1300

Patent

active

050330225

ABSTRACT:
A semiconductor memory device having an improved digit line structure which is capable of carrying out a low-noise operation is disclosed. The semiconductor memory device has in each column a digit line pair and a sense amplifier connected to the digit line pair. Each pair of digit lines are composed of a plurality of first wirings formed of a first conductor layer and a plurality of second wirings formed of a second conductor layer isolated from the first conductor layer through an insulating layer. One of the digit lines of each digit line pair is formed by electrically connecting part of the first wiring and part of the second wiring, and the other digit line of the digit line pair is formed by electrically connecting the other part of the first wiring and the other part of the second wiring.

REFERENCES:
patent: 4916661 (1990-04-01), Nawaki et al.
patent: 4980860 (1990-12-01), Houston et al.

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