Semiconductor memory device having internal voltage down-convert

Details Semiconductor memory device having internal voltage down-convert Semiconductor memory device having internal voltage down-convert

1997-07-24

1999-11-16

Yoo, Do Hyun

Static information storage and retrieval

Powering

365194, 365196, 365210, G11C 1300

Patent

active

059869593

ABSTRACT:
In order to reduce current consumption immediately after a power-on, generation of a voltage down-converting activation signal for activating a voltage down-converting circuit in accordance with an external control signal is stopped for maintaining the voltage down-converting activation signal supplied to the voltage down-converting circuit in an inactivate state. The voltage down-converting circuit can be maintained in the inactive state for a period from a power-on up to a dummy cycle, for reducing current consumption.

REFERENCES:
patent: 5612920 (1997-03-01), Tomishima

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