Semiconductor memory device having increased capacitance for the

Details Semiconductor memory device having increased capacitance for the Semiconductor memory device having increased capacitance for the

1987-10-27

1989-07-18

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 236, 357 29, 357 41, 357 59, 357 71, 365154, H01L 2952, H01L 2978, G11C 1100

Patent

active

048498017

ABSTRACT:
A semiconductor memory device is provided in which an electrode applied with the power supply voltage or the ground voltage is provided on an insulating layer over the drain and/or the gate of the MOS transistors constituting the memory cell of a static memory device, thereby to increasing the capacitance of the storing node of the memory cell. This semiconductor memory device significantly reduces the occurrence of soft errors.

REFERENCES:
patent: 4240097 (1980-12-01), Raymond
patent: 4453175 (1984-06-01), Ariizumi et al.
patent: 4475118 (1984-10-01), Klein et al.
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4679171 (1987-07-01), Logwood et al.
Wang, "High Performance . . . RAM", IBM TDB, vol. 27, No. 4A, Sep. 84.

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