Semiconductor memory device having improved dynamic memory cell

Details Semiconductor memory device having improved dynamic memory cell Semiconductor memory device having improved dynamic memory cell

1989-04-13

1991-07-02

Hille, Rolf

357 235, 357 51, 357 71, H01L 2968, H01L 2702, H01L 2348

Patent

active

050289900

ABSTRACT:
A semiconductor memory device having an improved storage capacitor is disclosed. The memory device comprises a dynamic memory cell which including a gating transistor having first and second semiconductor regions formed on a surface of a semiconductor substrate and opposite in conductivity type to the semiconductor substrate, a gate insulating layer formed on the surface of the substrate between the first and second regions, a gate formed on the gate insulating layer and a first insulating layer covering the surface of the gate, and a storage capacitor having a second insulating layer thicker than the first insulating layer and formed on the surface of the semiconductor substrate via the first insulating layer, the second insulating layer having a trench exposing the surface of first region, a first conductive layer formed on the side wall of trench of the second insulating layer and connected to the first region, a dielectric insulating layer formed on the first conductive layer and a second conductive layer formed on the dielectric insulating layer.

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