Semiconductor memory device having first and second selecting li

Details Semiconductor memory device having first and second selecting li Semiconductor memory device having first and second selecting li

1991-01-08

1992-06-16

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 51, 36518903, H01L 2904, H01L 2702, G11C 1134

Patent

active

051228572

ABSTRACT:
A static RAM having first word lines each defined by extended gate electrodes of MISFETs constituting memory cells, and second word lines which are separate from the first word lines. The RAM further has a wiring for supplying a fixed potential such as a ground potential to the memory cells, the wiring being formed from the same layer as that for forming the second word lines.

REFERENCES:
patent: 4209716 (1980-06-01), Raymond, Jr.
patent: 4291328 (1981-09-01), Lien et al.
patent: 4322824 (1982-03-01), Allan
patent: 4453175 (1984-06-01), Ariizumi et al.
patent: 4488166 (1984-12-01), Lehrer
patent: 4604641 (1986-08-01), Konishi
patent: 4618945 (1986-10-01), Sakurai et al.
patent: 4710897 (1987-12-01), Masuoka et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4809046 (1989-02-01), Aoyama et al.
Ochii, et al., "A 17ns 64K CMOS RAM with a Schmitt Trigger Sense Amplifier," ISSCC Digest of Technical Papers, pp. 64-65; Feb. 13, 1985.

Affiliated with

Also associated with

Rating

Semiconductor memory device having first and second selecting li does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having first and second selecting li, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having first and second selecting li will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1757703