Semiconductor memory device having faulty cells

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185110, C365S185330, C365S200000

Reexamination Certificate

active

07616485

ABSTRACT:
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

REFERENCES:
patent: 5123016 (1992-06-01), Muller et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5198380 (1993-03-01), Harari
patent: 5270979 (1993-12-01), Harari et al.
patent: 5297029 (1994-03-01), Nakai et al.
patent: 5297148 (1994-03-01), Harari et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5396468 (1995-03-01), Harari et al.
patent: 5422842 (1995-06-01), Cernea et al.
patent: 5428621 (1995-06-01), Mehrotra et al.
patent: 5430859 (1995-07-01), Norman et al.
patent: 5471478 (1995-11-01), Mangan et al.
patent: 5504760 (1996-04-01), Harari et al.
patent: 5508971 (1996-04-01), Cernea et al.
patent: 5519843 (1996-05-01), Moran et al.
patent: 5532962 (1996-07-01), Auclair et al.
patent: 5640506 (1997-06-01), Duffy
patent: 5642316 (1997-06-01), Tran et al.
patent: 5732208 (1998-03-01), Tamura et al.
patent: 5764571 (1998-06-01), Banks
patent: 5778418 (1998-07-01), Auclair et al.
patent: 5841712 (1998-11-01), Wendell et al.
patent: 5844910 (1998-12-01), Niijima et al.
patent: 5859804 (1999-01-01), Hedberg et al.
patent: 5889711 (1999-03-01), Yang et al.
patent: 5896327 (1999-04-01), Yang
patent: 5909390 (1999-06-01), Harari
patent: 5920515 (1999-07-01), Shaik et al.
patent: 5940335 (1999-08-01), Kirihata
patent: 5995413 (1999-11-01), Holzmann et al.
patent: 6002620 (1999-12-01), Tran et al.
patent: 6031758 (2000-02-01), Katayama et al.
patent: 6058047 (2000-05-01), Kikuchi
patent: 6108253 (2000-08-01), Ohta
patent: 6119245 (2000-09-01), Hiratsuka
patent: 6230233 (2001-05-01), Lofgren et al.
patent: 6236601 (2001-05-01), Katayama et al.
patent: 6373758 (2002-04-01), Hughes et al.
patent: 6426893 (2002-07-01), Conley et al.
patent: 6434034 (2002-08-01), Wallace et al.
patent: 6445626 (2002-09-01), Hsu et al.
patent: 6466478 (2002-10-01), Park
patent: 6542405 (2003-04-01), Katayama et al.
patent: 6639857 (2003-10-01), Kang et al.
patent: 7002844 (2006-02-01), Park
patent: 7289363 (2007-10-01), Ha
patent: 2004/0022249 (2004-02-01), Katayama et al.
patent: 62-239252 (1987-10-01), None
patent: 63-219045 (1988-09-01), None
patent: 3-131951 (1991-06-01), None
patent: 4-308971 (1992-10-01), None
patent: 4308971 (1992-10-01), None
patent: 4-311236 (1992-11-01), None
patent: 5-67005 (1993-03-01), None
patent: 5-274219 (1993-10-01), None
patent: 6-20483 (1994-01-01), None
patent: 6044144 (1994-02-01), None
patent: 6-105443 (1994-04-01), None
patent: 6-124596 (1994-05-01), None
patent: 7-56816 (1995-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device having faulty cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having faulty cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having faulty cells will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4080236

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.