Semiconductor memory device having different capacity areas

Details Semiconductor memory device having different capacity areas Semiconductor memory device having different capacity areas

2007-09-28

2009-08-11

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110

Reexamination Certificate

active

07573744

ABSTRACT:
There is provided a semiconductor memory device with NAND strings arranged therein, the NAND string having a plurality of electrically rewritable and non-volatile memory cells connected in series, including: a first data area; and a second data area, which is smaller in capacitance than the first data area and random accessible at a higher rate than the first data area.

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