Semiconductor memory device having charge-pump system with impro

Details Semiconductor memory device having charge-pump system with impro Semiconductor memory device having charge-pump system with impro

1993-03-26

1995-02-28

LaRoche, Eugene R.

Static information storage and retrieval

Powering

36518909, 327538, 327536, G11C 700

Patent

active

053943724

ABSTRACT:
A charge-pump system with an improved oscillation circuit. An electrically programmable non-volatile semiconductor memory device having the charge-pump system with the improved oscillation circuit includes a memory system equipped with a memory circuit having a non-volatile memory function, a oscillating circuit for generating an signal having a frequency which is increased in response to a decrease of a power supply voltage, and a charge-pump circuit which generates a voltage required to write data into or erase data from memory by charge-pumping the power supply voltage according to the signal generated by the oscillating circuit. A ring oscillator serves as the oscillating circuit and the ring oscillator is constituted of a group of inverter circuits connected circularly to one another via a MOS transistor which serves to transfer an electric charge, a gate electrode of the MOS transistor being connected to an output terminal of a voltage converting circuit which increases a transfer capacity of the MOS transistor as the power supply voltage decreases.

REFERENCES:
patent: 4471290 (1984-09-01), Yamaguchi
patent: 5058063 (1991-10-01), Wada et al.
patent: 5172342 (1992-12-01), Gochi
patent: 5182529 (1993-01-01), Chern
patent: 5193198 (1993-03-01), Yokouchi
patent: 5227675 (1993-07-01), Taguchi
patent: 5267218 (1993-11-01), Elbert

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