Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-09
2005-08-09
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185210, C365S185230
Reexamination Certificate
active
06928000
ABSTRACT:
The present invention provides a semiconductor memory device that performs a highly reliable data read operation at a high speed. This semiconductor memory device reads data stored in memory cells in accordance with a result of a comparison between a signal read out from the memory cells, which are connected to a word line, with a signal read out from a reference cell connected to a reference word line. This semiconductor memory device includes a load capacity adjustment circuit that adjusts the timing of starting up the gate of the reference cell in accordance with each location of the connection of the memory cells to the word line.
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Homma Yoshikazu
Takeguchi Tetsuji
Arent & Fox PLLC
Fujitsu Limited
Yoha Connie C.
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