Semiconductor memory device having a multi-layered...

Details Semiconductor memory device having a multi-layered... Semiconductor memory device having a multi-layered...

2005-12-13

2005-12-13

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S635000, C257S296000

Reexamination Certificate

active

06975019

ABSTRACT:
A semiconductor memory device having a gate insulation film, comprising a semiconductor substrate; a memory cell array formed on the semiconductor substrate, the memory cell array including a plurality of memory cell transistors, each of which has the gate insulation film; a first interlayer insulation film covered the memory cell array and including deuterium; a silicon nitride layer formed above the first interlayer insulation film; and a second interlayer insulation film formed above the silicon nitride layer, and including deuterium, a density of deuterium in the first interlayer insulation film being higher than that of deuterium in the second interlayer insulation film.

REFERENCES:
patent: 6670241 (2003-12-01), Kamal et al.
patent: 10-303303 (1998-11-01), None
patent: 11-274489 (1999-10-01), None
patent: 11-284183 (1999-10-01), None
patent: 2000-77621 (2000-03-01), None
patent: 2002-118252 (2002-04-01), None
patent: 2002-298591 (2002-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device having a multi-layered... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having a multi-layered..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a multi-layered... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3469014