Semiconductor memory device having a liquid-repellent layer

Details Semiconductor memory device having a liquid-repellent layer Semiconductor memory device having a liquid-repellent layer

2011-07-12

2011-07-12

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S003000, C257S632000, C257SE45002

Reexamination Certificate

active

07977669

ABSTRACT:
It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.

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