Semiconductor memory device having a field effect transistor wit

Details Semiconductor memory device having a field effect transistor wit Semiconductor memory device having a field effect transistor wit

1992-03-06

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257393, 257408, 257903, 257350, H01L 2978

Patent

active

052987647

ABSTRACT:
In a semiconductor device and, in particular, a semiconductor memory device in which a channel region formed in a polycrystalline film of a first channel conductivity type insulated gate field effect transistor is divided into a first channel region, which is in contact with a drain region, and a second channel region and the second channel region contains a second conductivity type impurity or a first conductivity type impurity whose density is higher than the impurity density of the first channel region, the threshold voltage can be controlled and the leakage current can be made small.

REFERENCES:
patent: 4236167 (1980-11-01), Woods
patent: 4980732 (1990-12-01), Okazawa

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