Semiconductor memory device for storing multivalued data

Details Semiconductor memory device for storing multivalued data Semiconductor memory device for storing multivalued data

2005-08-02

2005-08-02

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185120, C365S185220

Reexamination Certificate

active

06925004

ABSTRACT:
In the operation of writing the second page, the control circuit precharges the bit line in verifying data “2” in the memory cell when the DDC has data “1” in it after the data cache is set and does not precharge the bit line when the DDC has data “0” in it. As a result, when data “2” has been written into the memory cell, the bit line is at the intermediate potential, which raises the threshold voltage of the memory cell a little.

REFERENCES:
patent: 5428569 (1995-06-01), Kato et al.
patent: 5768188 (1998-06-01), Park et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 5986933 (1999-11-01), Takeuchi et al.
patent: 6028794 (2000-02-01), Nakai et al.
patent: 6288935 (2001-09-01), Shibata et al.
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6850435 (2005-02-01), Tanaka

Affiliated with

Also associated with

Rating

Semiconductor memory device for storing multivalued data does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device for storing multivalued data, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device for storing multivalued data will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3507378