Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-03-29
2008-12-30
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07471559
ABSTRACT:
In a memory cell array, a plurality of memory cells are arranged in a matrix. Each of the plurality of memory cells stores one of a plurality of threshold levels. When writing one of the plurality of threshold levels into a first memory cell of the memory cell array, a control circuit writes a threshold level a little lower than the original threshold level. When not writing a second memory cell adjacent to the first memory cell consecutively, the control circuit writes the original threshold level into the first memory cell.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Phung Anh
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