Semiconductor memory device for reducing power consumption

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S230010

Reexamination Certificate

active

07920429

ABSTRACT:
A semiconductor memory device which includes: a voltage supplying unit for outputting a power source voltage as a driving source signal during a predetermined time, and then outputting a high voltage as the driving source signal in response to a driving control signal activated in response to an address signal; and a word line control unit for activating a word line at a voltage level of the driving source signal in response to the driving control signal.

REFERENCES:
patent: 5265052 (1993-11-01), D'Arrigo et al.
patent: 5276652 (1994-01-01), Anami
patent: 6657915 (2003-12-01), Seo et al.
patent: 10-0204792 (1999-06-01), None
Korean Notice of Preliminary Rejection, issued in Korean Patent Application No. KR 10-2007-0111570 dated Dec. 19, 2008.

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