Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-04-05
2011-04-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230010
Reexamination Certificate
active
07920429
ABSTRACT:
A semiconductor memory device which includes: a voltage supplying unit for outputting a power source voltage as a driving source signal during a predetermined time, and then outputting a high voltage as the driving source signal in response to a driving control signal activated in response to an address signal; and a word line control unit for activating a word line at a voltage level of the driving source signal in response to the driving control signal.
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Korean Notice of Preliminary Rejection, issued in Korean Patent Application No. KR 10-2007-0111570 dated Dec. 19, 2008.
Chi Sung-Soo
Lee Jae-Jin
Ho Hoai V
Hynix / Semiconductor Inc.
IP & T Group LLP
Lappas Jason
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