Semiconductor memory device for reducing cell area

Details Semiconductor memory device for reducing cell area Semiconductor memory device for reducing cell area

2006-10-30

2009-08-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S230060, C365S189110, C365S189011, C365S189050, C365S205000, C365S207000, C365S185110, C365S185130

Reexamination Certificate

active

07580313

ABSTRACT:
A semiconductor memory device with a reduced cell area and a high-speed data transfer by modifying a circuit layout. The semiconductor memory device includes: a cell area with a first and a second cell areas; a plurality of Y decoders of which one Y decoder selects bit line sense amplifiers in the first and the second cell areas; IO sense amplifiers provided with a first IO sense amplifier and a second IO sense amplifier; a plurality of first data lines for transferring a data sensed and amplified at the bit line sense amplifier of the first cell area; and a plurality of second data lines for transferring a data sensed and amplified at the bit line sense amplifier of the second cell area.

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