Static information storage and retrieval – Powering
Reexamination Certificate
2006-09-26
2009-10-20
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Powering
C365S189090, C365S194000, C365S201000, C365S189020
Reexamination Certificate
active
07606103
ABSTRACT:
A semiconductor memory device is provided. Especially, there is disclosed a technique capable of increasing a net die by employing a cell capacitor as a reservoir capacitor according to a set mode. The semiconductor memory device of the present invention uses the cell capacitor as the reservoir capacitor in a normal mode, and prevents each voltage from being applied to the cell capacitor in a burn-in test mode. The voltage applied to the cell capacitor or MOS transistor can be adjusted according to the set mode.
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Blakely , Sokoloff, Taylor & Zafman LLP
Hynix / Semiconductor Inc.
Le Thong Q
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