Semiconductor memory device comprising one or more high-resistan

Details Semiconductor memory device comprising one or more high-resistan Semiconductor memory device comprising one or more high-resistan

1991-08-16

1994-04-26

LaRoche, Eugene R.

Static information storage and retrieval

Format or disposition of elements

365148, 257380, 257381, 257903, G11C 1100, H01L 2904

Patent

active

053073088

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells, and each of the memory cells includes a transistor region in which one or more transistors included in the memory cell are formed and a high-resistance element region in a resistor layer overlying the transistor region in which one or more high-resistance elements are formed. The high-resistance element region has a shape different from that of the transistor region and occupies an area not larger than that of the transistor region.

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patent: 4841481 (1989-06-01), Ikeda et al.
patent: 4910576 (1990-03-01), Campbell et al.
patent: 5012443 (1991-04-01), Ema
patent: 5124774 (1992-06-01), Godinho et al.

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