Semiconductor memory device comprising controllable...

Details Semiconductor memory device comprising controllable... Semiconductor memory device comprising controllable...

2007-11-27

2007-11-27

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S210130

Reexamination Certificate

active

11180659

ABSTRACT:
The present invention provides a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitch of word lines at an end of a memory block. Plural dummy word lines are disposed at an end of a memory block and a word driver is mounted for the dummy word line to control the threshold voltage of a dummy memory cell formed below the dummy word line. Also at the time of operating a memory area for storing data from the outside, a bias is applied to the dummy word line. The invention can prevent a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitches of word lines at an end of a memory block, and realize high yield and reliable operation.

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