Semiconductor memory device comprising a plurality of memory arr

Static information storage and retrieval – Format or disposition of elements

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365 63, 257920, G11C 506

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active

051843218

ABSTRACT:
A plurality of memory arrays (10a, 10b) are formed on a semiconductor chip (CH). A peripheral circuit (60) is arranged in the central portion of the plurality of memory arrays (10a, 10b). A plurality of pads (PD;p1.about.p18) are formed on both ends of the semiconductor chip (CH). The plurality of memory arrays (10a, 10b) are formed of predetermined layers (101.about.109). A plurality of interconnections (L) to be connected between the plurality of pads (PD;p1.about.p18) and the peripheral circuit (60) are provided to cross the plurality of memory arrays. The plurality of interconnections (L) are formed of layers (112;113) other than the predetermined ones.

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K. Kimura et al, "Power Reduction Techniques in Megabit DRAM's", IEEE Journal of Solid-State Circuits, vol. SC-21, vol. SC-21, (Jun. 1986), pp. 381-387.

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