Semiconductor memory device compensating leakage current

Details Semiconductor memory device compensating leakage current Semiconductor memory device compensating leakage current

2008-05-21

2010-12-07

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Powering

Conservation of power

C365S228000, C365S226000, C365S203000, C365S206000

Reexamination Certificate

active

07848171

ABSTRACT:
A cell array has a plurality of memory cells arranged in a matrix. Each one terminal of a plurality of switching circuits is connected to a bit line. A leakage current compensating circuit has an output node connected in common to the other terminal of the switching circuit. The leakage current compensating circuit comprises a plurality of MOSFETs. Each MOSFET has the same conduction type as a MOSFET whose output node is directly connected to the bit line in the memory cell. Each MOSFET of the leakage current compensating circuit has a gate electrode connected to a first voltage node and a source electrode connected to a second voltage node, and thereby, being biased so that the MOSFET turns off.

REFERENCES:
patent: 4371956 (1983-02-01), Maeda et al.
patent: 6181626 (2001-01-01), Brown
patent: 6335893 (2002-01-01), Tanaka et al.
patent: 6343039 (2002-01-01), Agawa et al.
patent: 6343045 (2002-01-01), Shau
patent: 6452852 (2002-09-01), Bohm et al.
patent: 6501687 (2002-12-01), Choi
patent: 6657911 (2003-12-01), Yamaoka et al.
patent: 6738280 (2004-05-01), Satomi
patent: 6801463 (2004-10-01), Khellah et al.
patent: 6967875 (2005-11-01), Chen et al.
patent: 7085184 (2006-08-01), Walther et al.
patent: 7085187 (2006-08-01), Koshikawa et al.
patent: 7161844 (2007-01-01), Sarin et al.
patent: 7193926 (2007-03-01), Park et al.
patent: 7245526 (2007-07-01), Oh et al.
patent: 7248494 (2007-07-01), Oh et al.
patent: 7355893 (2008-04-01), Ema
patent: 7379362 (2008-05-01), Abe et al.
patent: 7573748 (2009-08-01), Bedarida et al.
patent: 2002-208280 (2002-07-01), None
patent: 2006-079812 (2006-03-01), None

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