Semiconductor memory device capable of storing plural-bit data i

Details Semiconductor memory device capable of storing plural-bit data i Semiconductor memory device capable of storing plural-bit data i

1995-02-01

1997-07-22

Nguyen, Viet Q.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365404, 365408, 365344, 365314, 365174, 365177, 365184, H01L 2710

Patent

active

056506562

ABSTRACT:
Each of memory cells has one MOS transistor including a drain region, a source region, a channel region and a gate electrode. An impurity-introducing area of the channel region is varied in the width direction of the channel region to store data of plural bits in the memory cell.

REFERENCES:
patent: 4449203 (1984-05-01), Adlhoch
patent: 4495602 (1985-01-01), Sheppard
patent: 4503518 (1985-03-01), Iwahashi
patent: 4604732 (1986-08-01), Van Tran
patent: 5012448 (1991-04-01), Matsuoka et al.
patent: 5311463 (1994-05-01), Tayi
European Search Report, dated Dec. 29, 1995, Appl. No. 95101422.4.
"Mid-Level Current Generator Circuit", IBM Technical Disclosure Bulletin, vol. 33, No. 1B, Jun. 1990, pp. 386-388.

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