Semiconductor memory device capable of preventing malfunction du

Details Semiconductor memory device capable of preventing malfunction du Semiconductor memory device capable of preventing malfunction du

1998-09-17

1999-11-16

Le, Vu A.

Static information storage and retrieval

Interconnection arrangements

365 52, G11C 700

Patent

active

059869151

ABSTRACT:
A column select line includes a first layer column select line and a second layer column select line formed above the first layer column select line and connected thereto at any point. Furthermore, clamping circuits each for clamping each word line of paired main word lines at a constant potential are provided in a semiconductor memory device having main and secondary word line structure. With such a structure, malfunction due to multiselection of memory cells can be avoided even when the column select line or the paired main word lines is disconnected.

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D6: Tietze-Schenk, Halbleiter-Schaltungstechnik, Berlin, 1974, pp. 135-138, (see attached Translation of the Relevant Part of D6).

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