Semiconductor memory device capable of efficient memory cell sel

Details Semiconductor memory device capable of efficient memory cell sel Semiconductor memory device capable of efficient memory cell sel

1999-04-01

2000-07-04

Phan, Trong

Static information storage and retrieval

Addressing

Plural blocks or banks

36523006, 365203, G11C 800, G11C 700

Patent

active

060848189

ABSTRACT:
Four subordinate word lines are driven for a single main word line. In a subordinate word driver circuit, a bank select line activated allows a potential level of a main word line to be transmitted to an internal node via a first transistor. Simultaneously, a select line is also active and a potential level of the internal node is transmitted to a subordinate word line via a second transistor. A bank select line is inactivated and the select line is then further boosted to a boosted potential so that it is driven to a boosted potential of a potential level of the subordinate word line.

REFERENCES:
patent: 4984204 (1991-01-01), Sato et al.
patent: 5386387 (1995-01-01), Tanizaki
patent: 5652731 (1997-07-01), Saeki
patent: 5946243 (1999-08-01), Sim

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