Semiconductor memory device capable of easily performing...

Details Semiconductor memory device capable of easily performing... Semiconductor memory device capable of easily performing...

2011-06-07

2011-06-07

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synchronizing

C327S162000, C327S158000

Reexamination Certificate

active

07956659

ABSTRACT:
A semiconductor memory device includes a first clock buffer for outputting a first internal clock signal in response to an inverted signal of the system clock signal and for correcting a duty cycle ratio of the first internal clock signal in response to a control signal; a second clock buffer for outputting a second internal clock signal in response to the system clock signal and for correcting a duty cycle ratio of the second internal clock signal in response to the control signal; an analog duty cycle correction circuit for outputting the control signal corresponding to the duty cycle ratio of the first and second internal clock signals; a mixing circuit for mixing the first and second internal clock signals and for outputting a third internal clock signal whose duty cycle is corrected; and a DLL circuit for outputting a delay-locked clock signal by using the third internal clock signal.

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