Semiconductor memory device capable of correct reading of data u

Details Semiconductor memory device capable of correct reading of data u Semiconductor memory device capable of correct reading of data u

1992-07-15

1994-04-19

LaRoche, Eugene R.

Static information storage and retrieval

Powering

365229, G11C 700

Patent

active

053052757

ABSTRACT:
An improved flash EEPROM with a sense amplifier having a sensing characteristics suitable for sensing a data signal under an externally applied supply voltage Vcc in a lower range, and a sense amplifier having a sensing characteristics suitable for sensing a data signal under the supply voltage Vcc in a higher range. A Vcc level detecting device detects in which range the supply voltage Vcc is in, soasto selectively enable one of sense amplifiers. Since the data signal is amplified using the sense amplifier having the optimum sensing characteristics in accordance with the level of the supply voltage, the stored data can be accurately read.

REFERENCES:
patent: 4524291 (1985-06-01), Lehning
patent: 4810910 (1989-03-01), Schoellikopf
patent: 5013935 (1991-05-01), Mahabadi
patent: 5031145 (1991-07-01), Lever
patent: 5083045 (1992-01-01), Yim
patent: 5097146 (1992-03-01), Kowalski
"A 1.7 Volts Operating CMOS 64KBit E.sup.2 PROM", Yukio Wada et al., 1989 Symposium on VLSI Circuits, pp. 41-42.

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