Semiconductor memory device capable of accessing data in...

Details Semiconductor memory device capable of accessing data in... Semiconductor memory device capable of accessing data in...

2005-08-16

2005-08-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S230060, C365S239000

Reexamination Certificate

active

06930951

ABSTRACT:
There is provided a semiconductor memory device and a method for driving the same, which is capable of accessing data in a continuous burst mode regardless of locations of accessed data. The semiconductor memory device includes: a first bank including a first word line corresponding to a first row address; and a second bank including a second word line corresponding to a second row address, wherein the second row address is consecutive to the first row address. The method for driving a semiconductor memory device includes the steps of: receiving a first row address corresponding to a command; activating a word line of a first bank corresponding to the first row address; activating a word line of a second bank corresponding to a second row address, in which the second row address is consecutive to the first row address; sequentially accessing the predetermined number of data among the N data in a plurality of unit cells corresponding to the word line of the first bank; and sequentially accessing the remaining data in a plurality of unit cells corresponding to a word line of the second bank.

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