Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-06-07
2011-06-07
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S063000, C365S194000, C365S203000
Reexamination Certificate
active
07957200
ABSTRACT:
The semiconductor memory device includes a plurality of memory cell arrays and a control circuit that outputs a first signal and a second signal. The first signal instructs start of precharging of each memory cell array. The second signal instructs completion of the precharging and transition to a read access. The first signal is wired through one or more delay circuits to arrive at each memory cell array with a time difference, and the second signal is wired not through the one or more delay circuits.
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patent: 03/073430 (2003-09-01), None
Nguyen Tan T.
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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