Semiconductor memory device and read access method thereof

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S063000, C365S194000, C365S203000

Reexamination Certificate

active

07957200

ABSTRACT:
The semiconductor memory device includes a plurality of memory cell arrays and a control circuit that outputs a first signal and a second signal. The first signal instructs start of precharging of each memory cell array. The second signal instructs completion of the precharging and transition to a read access. The first signal is wired through one or more delay circuits to arrive at each memory cell array with a time difference, and the second signal is wired not through the one or more delay circuits.

REFERENCES:
patent: 4774691 (1988-09-01), Hidaka
patent: 7085189 (2006-08-01), Horii et al.
patent: 7555659 (2009-06-01), Lines
patent: 2005/0082579 (2005-04-01), Horii et al.
patent: 2001-035167 (2001-02-01), None
patent: 03/073430 (2003-09-01), None

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