Semiconductor memory device and process for producing the same

Details Semiconductor memory device and process for producing the same Semiconductor memory device and process for producing the same

1981-12-23

1985-02-19

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 45, 365185, H01L 2978, H01L 2702, H01L 2710

Patent

active

045008990

ABSTRACT:
The present invention is an improvement of a semiconductor memory device, preferably a PROM or a mask ROM, wherein: MOS transistors are formed in a semiconductor substrate, are arranged in rows, and are isolated from each other by a plurality of field insulation films arranged in an island pattern; the MOS transistors aligned in one of the rows have one common gate which extends over one row of field insulation films; the MOS transistors aligned in one of the rows have a common first region for forming a drain or a source parallel to the common gates; and a second region for forming another drain or source is surrounded by a pair of common gates and a pair of field insulation films so that a plurality of second regions are isolated from each other. According to the present invention, the field insulation films and the common gates are delineated to coincide with one another at the ends thereof facing the common first region using a mask film extending between a pair of common gates and covering the region between the pair of common gates and the part of the common gates not covered by the mask film.

REFERENCES:
patent: 3979765 (1976-09-01), Brand
patent: 4170500 (1979-10-01), Crossley
patent: 4181537 (1980-01-01), Ichinohe
patent: 4264409 (1981-04-01), Forget et al.
patent: 4368106 (1983-01-01), Anthony
R. A. Kenyon et al., "Density Improvement in MNOS Array by Overlapping Gate Electrodes", IBM Technical Disclosure Bulletin, vol. 18, (1975), pp. 68-69.

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