Semiconductor memory device and portable electronic apparatus

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185230, C365S185130

Reexamination Certificate

active

07064982

ABSTRACT:
A semiconductor memory device includes a memory cell including a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges; a switching transistor circuit including a negative voltage switching circuit for applying a negative voltage to the gate electrode of the memory cell, and a switching transistor connected to an output of the negative voltage switching circuit and a first voltage source for outputting a voltage having a voltage level lower than zero volt; a pull-up circuit connected to a control terminal of the switching transistor and selectively connected to a second voltage source for outputting a voltage having a voltage level higher than zero volt; and a pull-down circuit connected to the first voltage source and the control terminal of the switching transistor.

REFERENCES:
patent: 5835409 (1998-11-01), Lambertson
patent: 5978263 (1999-11-01), Javanifard et al.
patent: 6195291 (2001-02-01), Dallabora et al.
patent: 5-81072 (1993-11-01), None
patent: 5-304277 (1993-11-01), None
patent: 9-97849 (1997-04-01), None
patent: 9-116119 (1997-05-01), None
patent: 2001-156188 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None
patent: 2001-512290 (2001-08-01), None

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