Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-06-20
2006-06-20
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S185130
Reexamination Certificate
active
07064982
ABSTRACT:
A semiconductor memory device includes a memory cell including a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges; a switching transistor circuit including a negative voltage switching circuit for applying a negative voltage to the gate electrode of the memory cell, and a switching transistor connected to an output of the negative voltage switching circuit and a first voltage source for outputting a voltage having a voltage level lower than zero volt; a pull-up circuit connected to a control terminal of the switching transistor and selectively connected to a second voltage source for outputting a voltage having a voltage level higher than zero volt; and a pull-down circuit connected to the first voltage source and the control terminal of the switching transistor.
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Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Yaoi Yoshifumi
Hoang Huan
Sharp Kabushiki Kaisha
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