Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-04-04
2006-04-04
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185280, C365S185290
Reexamination Certificate
active
07023731
ABSTRACT:
A semiconductor memory device including: a memory cell array in which memory cells are arranged; a plurality of terminals for accepting commands issued by an external user; a command interface circuit for interfacing between the external user and the memory cell array; a write state machine for controlling the programming and erasing operations; and an output circuit for outputting an internal signal to the plurality of terminals, wherein the memory cell includes a gate electrode formed over a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional elements formed on both sides of the gate electrode and having the function of retaining charges.
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Office Action mailed Jun. 1, 2005 for U.S. Appl. No. 10/851,709, filed May 20, 2004.
Hamaguchi Koji
Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Morrison & Foerster / LLP
Phung Anh
Sharp Kabushiki Kaisha
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