Semiconductor memory device and phase change memory device

Details Semiconductor memory device and phase change memory device Semiconductor memory device and phase change memory device

2006-08-11

2010-06-01

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S214000, C257S298000, C257S758000, C257SE45003, C257SE27004, C257SE21667, C257SE27102, C257SE21268, C257S296000, C257SE47005, C438S479000

Reexamination Certificate

active

07728320

ABSTRACT:
A phase change memory (PCM) device includes a substrate, bottom electrodes disposed in the substrate, a first dielectric layer disposed on the substrate, second dielectric layers, third dielectric layers, cup-shaped thermal electrodes, top electrodes, and PC material spacers. In the PCM device, each cup-shaped thermal electrode contacts with each bottom electrode. Second and third dielectric layers are disposed over the substrate in different directions, wherein each of the second and third dielectric layers covers a portion of the area surrounded by each cup-shaped thermal electrode, and the third dielectric layers overlay the second dielectric layers. The top electrodes are disposed on the third dielectric layers, wherein a plurality of stacked structure composed of the third dielectric layers and the top electrodes are formed thereon. The PC material spacers are formed on the sidewalls of each stacked structure and physically and electrically contact the cup-shaped thermal electrodes and the top electrodes.

REFERENCES:
patent: 7002195 (2006-02-01), Park
patent: 7064344 (2006-06-01), Xu
patent: 7135696 (2006-11-01), Karpov et al.
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2005/0064606 (2005-03-01), Pellizzer et al.
patent: 2005/0191804 (2005-09-01), Lai et al.
patent: 1339111 (2003-08-01), None

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