Semiconductor memory device and operating method

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36518909, G11C 700

Patent

active

053413407

ABSTRACT:
A substrate bias generating circuit includes V.sub.BB generating circuits and a switching circuit. The switching circuit, in the standby period, applies an internal power supply voltage applied by an internal voltage down converting circuit to the V.sub.BB generating circuits. The switching circuit, in the active period, applies an external power supply voltage to the V.sub.BB generating circuits.

REFERENCES:
patent: 4455628 (1984-06-01), Ozaki et al.
patent: 4585954 (1986-04-01), Hashimoto et al.
patent: 4817055 (1989-03-01), Arakawa et al.
patent: 5146110 (1992-09-01), Kim et al.

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