Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-03-01
2011-03-01
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185050, C365S185130, C365S185140, C365S230030
Reexamination Certificate
active
07898854
ABSTRACT:
A semiconductor memory device includes first to third memory cell units each including a first select transistor, a second select transistor and a plurality of memory cell transistors which are connected in series in a first direction between the first select transistor and the second select transistor, the first and second select transistors of the respective memory cell transistors being disposed to neighbor in a second direction crossing the first direction. Those of the memory cell transistors, which neighbor the first and second select transistors, are used as select memory cell transistors.
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Ho Hoai V
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Radke Jay
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