Semiconductor memory device and method of preliminary data...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185050, C365S185130, C365S185140, C365S230030

Reexamination Certificate

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07898854

ABSTRACT:
A semiconductor memory device includes first to third memory cell units each including a first select transistor, a second select transistor and a plurality of memory cell transistors which are connected in series in a first direction between the first select transistor and the second select transistor, the first and second select transistors of the respective memory cell transistors being disposed to neighbor in a second direction crossing the first direction. Those of the memory cell transistors, which neighbor the first and second select transistors, are used as select memory cell transistors.

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patent: 2007-35166 (2007-02-01), None

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