Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-16
2011-08-16
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S430000, C438S187000
Reexamination Certificate
active
07999246
ABSTRACT:
A semiconductor memory device includes a first resistance change element having a first portion and a second portion, the first portion and the second portion having a first space in a first direction, and a second resistance change element formed to have a distance to the first resistance change element in the first direction, and having a third portion and a fourth portion, the third portion and the fourth portion having a second space in the first direction, and the first space and the second space being shorter than the distance.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pham Long
Rao Steven H
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