Semiconductor memory device and method of manufacturing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S430000, C438S187000

Reexamination Certificate

active

07999246

ABSTRACT:
A semiconductor memory device includes a first resistance change element having a first portion and a second portion, the first portion and the second portion having a first space in a first direction, and a second resistance change element formed to have a distance to the first resistance change element in the first direction, and having a third portion and a fourth portion, the third portion and the fourth portion having a second space in the first direction, and the first space and the second space being shorter than the distance.

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patent: 7132348 (2006-11-01), Geusic et al.
patent: 7671377 (2010-03-01), Kim et al.
patent: 2007/0072132 (2007-03-01), Kamijima et al.
patent: 5-198817 (1993-08-01), None
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patent: 7-263677 (1995-10-01), None
patent: 2001-156283 (2001-06-01), None
patent: 2006-156657 (2006-06-01), None
patent: 2007-180474 (2007-07-01), None
patent: 2008-523605 (2008-07-01), None
patent: WO 2006/064441 (2006-06-01), None

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