Semiconductor memory device and method of making design...

Static information storage and retrieval – Format or disposition of elements

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S063000

Reexamination Certificate

active

11302325

ABSTRACT:
The positions of the main driver10, the output pad20and the first buffer61and the second buffer62are changed from the central region111to the peripheral region120, and the first control signal line31and the second control signal line32are elongated. The distance between the output pad20and the main driver10is maintained so that the resistance between the output pad20and the main driver10does not increase.

REFERENCES:
patent: 5619472 (1997-04-01), Okamura
patent: 6021080 (2000-02-01), Miyano
patent: 6727533 (2004-04-01), Matsuzaki et al.
patent: 6813213 (2004-11-01), Nagata et al.
patent: 08-139287 (1996-05-01), None
patent: 2000-353785 (2000-12-01), None
patent: 2003-007860 (2003-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device and method of making design... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method of making design..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of making design... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3837658

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.