Semiconductor memory device and method of formation

Details Semiconductor memory device and method of formation Semiconductor memory device and method of formation

1992-10-26

1994-05-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437 56, 437 57, 437 89, 437915, H01L 2170

Patent

active

053087828

ABSTRACT:
A semiconductor memory device is formed having a substrate (12). A diffusion (14) is formed within the substrate (12). A first vertical transistor stack (122) is formed. A second vertical transistor stack (124) is formed. The first vertical transistor stack (122) has a transistor (100) underlying a transistor (104). The second vertical transistor stack (124) has a transistor (102) underlying a transistor (106). The transistors (100 and 104) are connected in series, and the transistors (102 and 106) are connected in series. In a preferred form, transistors (100 and 102) are electrically connected as latch transistors for a semiconductor memory device and transistors (106 and 104) are connected as pass transistors. Two vertical stacks (126 and 128) form electrical interconnections (118 and 120) and resistive devices (134 and 138) for the semiconductor memory device.

REFERENCES:
patent: 4554570 (1985-11-01), Jastrzebski

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