Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

1996-02-28

1997-06-17

Nelms, David C.

Static information storage and retrieval

Addressing

Sequential

36523006, 365233, G11C 800

Patent

active

056403674

ABSTRACT:
In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

REFERENCES:
patent: 4395764 (1983-07-01), Matsue
patent: 5272675 (1993-12-01), Kobaysashi
patent: 5291457 (1994-03-01), Asato et al.

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