Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-09-28
2008-12-09
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185100, C365S185150, C365S185260
Reexamination Certificate
active
07463523
ABSTRACT:
A semiconductor memory device includes a semiconductor layer; a source layer provided in the semiconductor layer; a drain layer provided in the semiconductor layer; a body region provided in the semiconductor layer between the source layer and the drain layer; a gate insulation film provided on the body region; and a gate electrode provided on the gate insulation film, wherein data are written or read out by accumulating electric charge in the body region or releasing electric charge from the body region, and wherein a difference between the potential VSRof the source layer in a data-retaining period and the potential VGRof the gate electrode in the data-retaining period is smaller than a difference between the potential VSWof the source layer in a data write period and the potential VGR.
REFERENCES:
patent: 6538916 (2003-03-01), Ohsawa
patent: 6621725 (2003-09-01), Ohsawa
patent: 6992930 (2006-01-01), Matsuoka et al.
patent: 7262992 (2007-08-01), Shibata et al.
patent: 2003-031696 (2003-01-01), None
Kabushiki Kaisha Toshiba
Luu Pho M.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Semiconductor memory device and method of driving a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of driving a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of driving a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037969