Semiconductor memory device and method for operating the same

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Phase shift by less than period of input

Reexamination Certificate

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Details

C327S003000, C327S033000, C327S254000, C327S255000, C365S189070, C365S233100

Reexamination Certificate

active

08004336

ABSTRACT:
A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.

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patent: 7449930 (2008-11-01), Hur
patent: 7701267 (2010-04-01), Yoon et al.
patent: 7791391 (2010-09-01), Yoon et al.
patent: 7825712 (2010-11-01), Yoon
patent: 2005/0053180 (2005-03-01), Nose et al.
patent: 2002-042469 (2002-02-01), None
patent: 10-2000-0043233 (2000-07-01), None
patent: 10-0486256 (2005-04-01), None
patent: 10-2005-0041196 (2005-05-01), None
patent: 10-2007-0079315 (2007-08-01), None

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