Semiconductor memory device and method for manufacturing same

Details Semiconductor memory device and method for manufacturing same Semiconductor memory device and method for manufacturing same

2009-06-25

2011-12-06

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S005000, C257SE45002, C365S148000

Reexamination Certificate

active

08071969

ABSTRACT:
A semiconductor memory device includes a word line interconnect layer having a plurality of word lines extending in a word line direction and a bit line interconnect layer having a plurality of bit lines extending in a bit line direction alternately stacked on a silicon substrate. A variable resistance film is disposed between the word line and the bit line. A first pin diode extending in the word line direction is provided between the word line and the variable resistance film, and a second pin diode extending in the bit line direction is provided between the bit line and the variable resistance film. A region of an upper surface of the pin diode other than an immediately underlying region of the variable resistance film is located lower than the immediately underlying region.

REFERENCES:
patent: 4545111 (1985-10-01), Johnson
patent: 2010/0108974 (2010-05-01), Park
patent: 2010/0155784 (2010-06-01), Scheuerlein et al.
patent: 2005-522045 (2005-07-01), None
patent: 1993-0000719 (1993-01-01), None
patent: 10-2004-0107487 (2004-12-01), None
patent: WO 03/085675 (2003-10-01), None
Korean Office Action, issued by Korean Patent Office dated Apr. 11, 2011, in a counterpart Korean patent application No. 10-2010-0001641 (4 pages), and English translation thereof English translation of JP 2005-522045.

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