Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2009-01-16

2010-12-14

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257SE29264, C257SE29309

Reexamination Certificate

active

07851892

ABSTRACT:
A semiconductor memory device has a substrate having a semiconductor layer, an n-type semiconductor region formed beneath a main surface of the semiconductor layer, a plurality of cell gates being aligned at a space from each other and including a gate insulating film formed on the main surface of the semiconductor layer, a charge storage layer formed on the gate insulating film, a charge block layer formed on the charge storage layer and a control gate electrode formed on the charge block layer, an insulating film between cells formed on the main surface of the semiconductor layer between the cell gates, and a carbon accumulation region formed in the insulating film between the cells and has a maximum concentration of a carbon element in a region within 2 nm from an interface between the semiconductor layer and the insulating film between the cells.

REFERENCES:
patent: 2001/0034135 (2001-10-01), Miyakawa
patent: 2006/0237706 (2006-10-01), Enda et al.
patent: 2006/0240619 (2006-10-01), Ozawa et al.
patent: 2006/0267067 (2006-11-01), Ishihara
patent: 2007/0054453 (2007-03-01), Buh et al.
patent: 2007/0080390 (2007-04-01), Geissler et al.
patent: 2006-294711 (2006-10-01), None
patent: 2006-310393 (2006-11-01), None
Depas et al., “Definition of dielectric breakdown for ultra thin (< 2 nm) gate oxides”, 1997, Solid-State Electronics, vol. 41, No. 4, pp. 725-728.

Affiliated with

Also associated with

Rating

Semiconductor memory device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4210363