Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2007-03-27

2007-03-27

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S128000

Reexamination Certificate

active

10863330

ABSTRACT:
In a fabrication method according to the present invention, a first insulating film and tungsten plugs are formed over a substrate including a logic section and a memory section. An upper portion of one of the tungsten plug located in a memory section is removed, thereby forming a recess. A resistance heating element film covering side and bottom surfaces of the recess and a storage element film filling the recess with the resistance heating element film interposed between the storage element film and the plug are formed. Then, a Cu interconnect is formed on the storage element film. Thus, it is possible to make the process step of forming the resistance heating element film and the storage element film have higher consistency with a logic process.

REFERENCES:
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Hwang, Y.N., et al. “Full integration and reliability evaluation of phase-change on .24/spl mu/m-CMOS technologies.” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 1-2 http://ieeexplore.ieee.org.
Ha, Y.H., et al. “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption.” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 1-2.
Horii, H., et al. “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM.” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 1-2.

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