Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2005-12-20

2005-12-20

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S184000, C438S230000, C438S265000, C438S303000, C438S595000

Reexamination Certificate

active

06977226

ABSTRACT:
The present invention provides a semiconductor memory device capable of preventing bridge formations in a peripheral circuit region and improving a process margin and a method for fabricating the same. The semiconductor memory device includes: a cell region; a peripheral circuit region adjacent to the cell region; and a plurality of line patterns formed in the cell region and the peripheral circuit region, wherein a spacing distance between the line patterns is at least onefold greater than a width of the line pattern.

REFERENCES:
patent: 6060176 (2000-05-01), Semkow et al.
patent: 6166439 (2000-12-01), Cox
patent: 6181011 (2001-01-01), Rostoker et al.
patent: 6277726 (2001-08-01), Kitch et al.
patent: 6281587 (2001-08-01), Nogami et al.
patent: 6552435 (2003-04-01), Noble
patent: 2000-156383 (2000-06-01), None
patent: 1020000048262 (2000-07-01), None

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