Semiconductor memory device and method for erasing the same

Details Semiconductor memory device and method for erasing the same Semiconductor memory device and method for erasing the same

2011-07-05

2011-07-05

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S185290, C365S185300

Reexamination Certificate

active

07974130

ABSTRACT:
A semiconductor memory device including a memory cell array with NAND cell units arranged therein, the NAND cell unit having a plurality of electrically rewritable and non-volatile memory cells connected in series, first and second select gate transistors disposed for coupling the both ends of the NAND cell unit to a bit line and a source line, respectively, and a dummy cell disposed adjacent to at least one of the first and second select gate transistors, wherein after erasing the memory cells in an erase unit, the memory cells excepting the dummy cell are subject to soft-program.

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