Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2006-05-02

2006-05-02

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S296000

Reexamination Certificate

active

07038304

ABSTRACT:
A semiconductor memory device includes: a silicon substrate having a main surface; n+diffusion layers formed on the main surface of the silicon substrate distanced from each other; HDP oxide films formed on the n+diffusion layers and deposited on the main surface so as to protrude above the main surface; an ONO film (a stacked film of an oxide film, a nitride film, and an oxide film) as a charge holding layer formed between the HDP oxide films; and a gate electrode (a polysilicon film and a doped polysilicon film) extending over the ONO film and the HDP oxide films.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6768161 (2004-07-01), Kinoshita
patent: 6881994 (2005-04-01), Lee et al.
patent: 10-12750 (1998-01-01), None
patent: 2000-91450 (2000-03-01), None
patent: 2001-351993 (2001-12-01), None

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