Semiconductor memory device and manufacturing method of the same

Details Semiconductor memory device and manufacturing method of the same Semiconductor memory device and manufacturing method of the same

1993-08-31

1995-07-18

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular biasing

365182, 365900, 257314, 257316, 257317, 257321, H01L 2710, H01L 29788

Patent

active

054348137

ABSTRACT:
A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.

REFERENCES:
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 5278440 (1994-01-01), Shimoji

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